求一段论文的汉译英翻译，谢啦（2）

Question

一、半导体激光器出现的理论基础
尽管一些文献的作者强调各自在开创半导体激光器中所起的重要作用，但事实上没有一个人对半导体激光器的出现提出完整的理论依据，也没有一个早期的研究工作者为实现半导体激光器而解决了所有的工艺技术问题。因此，可以认为，半导体激光器的出现和发展是许多研究工作者共同智慧的结晶。
早在1953年9月，美国的冯.纽曼(John Von Neumann)在他一篇未发表的论文手稿中第一个论述了在半导体中产生受激发射的可能性；认为可以通过向PN结注入少数载记于来实现受激发射；计算了在两个布里据区之间的辐射跃迁速率。巴丁在总结冯‘纽曼关于半导体激光器的基本理论后认为．通过各种方法(例如向PN结注入少数载流子)扰动导带电子和价带空穴的平衡浓度，致使非平据少数载流于复合而产生光子．其辐射复合的速率可以像放大器那样，以同样频率的电磁辐射作用。这应该说是激光器(Liser)的最早概念，这比戈登(Corden)和汤斯(Towes)所报告的微波量子放大器(Maser)的概念还要早一年．
Ecsle Normale Superieure和Pierre Aigrain在1956年就曾鼓励美国无线电公司[RCA]的Pankove着手制造半导体激光器。1958年6月他在布鲁塞尔的一次国际会议上的发言中，第一个公开发表了在半导体中得到相干光的观点，但直到1964年他才公开发表文章论述半导体激光器的理论与实验工作。苏联列别捷夫物理研究所的巴索夫(Basov)等对半导体激光器的杰出贡献，在于他于1958年首次公开发表文章提出在半导体中实现负温态(即粒子数反转)的理论论述。他们又于1961年最先公开发表将载流子注入半导体PN结以实现“注入激光器”的论述，并论证了在如隧道二极管中那样高度简并的PN结中实现粒子数反转(这是产生受激发射的必要条件)的可能性，而且还认为有源区周围高密度的多数载流子造成有源区边界两边的折射率有一差值，因而产生光波导效应。这些理论对其后半导体激光器的出现起了积极的促进作用，巴索夫因此而得到诺贝尔奖金。然而，1963年前，巴索夫等所发表的关于半导体激光器的理论与实验的文章多是以半导体Ge为有源材料的。而腊克斯(Lax)在1959年曾提出直接带隙半导体(如GaAs、InP等)是比间接带隙半导体(如Ge，Si等)更适合于产生受激发射的材料。这一重要论断的正确性为后来所出现的半导体激光器所证实。
1960年贝尔实验室的布莱(Boyle)和汤姆逊提出了用半导体的平行解理而作为产生光反馈的谐振腔，这对加强受激光发射来说是必需的。光学谐振腔是激光器不可缺少的组成部分。
1961年伯纳德(Bernard)与杜拉福格(DM raffo“rg)利用准费。米能级的概念推导比在半导体有源介质中实现粒子数反转的条件。这一条件对次年半导体激光器的研究成功起到了重要的理论指导作用。
综上所述，理论上认为半导体激光器应该是在直接带隙半导体PN结中，用注入载流子的方法实现由伯纳德一杜拉福格条件所控制的粒子数反转；由电子和空穴复合所产生的受激光辐射在光学谐振腔内振荡并得到放大，最后产生相干激光输出。

Answer 1

First, semiconductor laser based on the theory
Although some literature that the author created in their respective semiconductor lasers in the important role played by, but the fact is no one on semiconductor laser to the emergence of a complete theoretical basis, nor an early worker for the realization of the study and solve the semiconductor laser All the technology issues. Therefore, it can be that the semiconductor laser is the emergence and development of many co-workers on the crystallization of wisdom.
As early as in September 1953, the U.S. Feng. Newman (John Von Neumann) in his unpublished papers a manuscript in the first exposition in the semiconductor produced by stimulated emission of possibility that can be injected to the PN junction Are in the minority in mind to achieve stimulated emission; calculated according to the two brilliant transition zone between the radiation rate. Bading concluded Feng 'Newman on the basic theory of semiconductor laser after that. Through various means (for example, to inject a small number of PN junction carrier) disturbance belt electronic price band Hole and the balance of concentration, according to which non-minority-carrier in the compound and a photon. The rate of its radiation can be like amplifiers, with the same frequency of electromagnetic radiation. It should be said to be laser (Liser) the earliest concept of this than Gordon (Corden) and the Andean soup (Towes) reported by the quantum of microwave amplifiers (Maser) to the concept as early as 2001.
Ecsle Normale Superieure and Pierre Aigrain in 1956 had encouraged the U.S. radio company [RCA] Pankove start manufacturing the semiconductor laser. June 1958 in Brussels of an international conference on the statement, first published in the semiconductor be coherent light of the views, but it was not until 1964 he published articles on the theory of semiconductor lasers and experimental work. Soviet Lebedev Physical Institute Basov (Basov), and so on the outstanding contribution of semiconductor lasers, he is the first time in 1958 published an article in the semiconductor raised in the realization of negative-state (that is, population inversion) on the theory . In 1961 they published the first carrier will be injected into the semiconductor PN junction to achieve the "injection laser" exposition and demonstration in the tunnel diodes as high as in Jane and the PN junction to achieve population inversion (which is Produced by stimulated emission of the necessary conditions for) the possibility, but also that active high-density areas around the most active carrier of the border areas on both sides of the refractive index of a difference, creating optical waveguide effect. After these theories to the emergence of semiconductor laser has played a positive role in promoting, Basuo Fu therefore be Nobel Prize. However, in 1963, published by the Basuo Fu, and so on semiconductor laser experiment with the theory of the article is more active semiconductor materials for Ge. And La Vieques (Lax) in 1959 made direct bandgap semiconductor (such as GaAs, InP, etc.) than the indirect bandgap semiconductor (such as Ge, Si, etc.) is more suited to produce stimulated emission of material. This important thesis for the accuracy of which appear later confirmed by the semiconductor laser.
1960 Bell Labs of Wembley (Boyle) and Thomson put forward in parallel with the semiconductor and as a cleavage-feedback resonator, the strengthening of the laser is essential. Laser optical resonator is an integral part.
1961 Bernard (Bernard) and Dulafuge (DM raffo "rg)-use fee. Derived the concept of energy meters in the semiconductor active than in the medium to achieve population inversion conditions on the condition that the following year The success of semiconductor laser research has played an important guiding role of theory.
To sum up, in theory, that should be in the semiconductor laser direct bandgap semiconductor PN junction, with the injection-carrier method by Bernard Dulafuge a condition under the control of population inversion, from electronics and Hole compound generated by the laser radiation in the optical resonant cavity oscillation be enlarged and, finally have a coherent laser output.

Answer 2

First, semiconductor laser based on the theory
Although some literature that the author created in their respective semiconductor lasers in the important role played by, but the fact is no one on semiconductor laser to the emergence of a complete theoretical basis, nor an early worker for the realization of the study and solve the semiconductor laser All the technology issues. Therefore, it can be that the semiconductor laser is the emergence and development of many co-workers on the crystallization of wisdom.
As early as in September 1953, the U.S. Feng. Newman (John Von Neumann) in his unpublished papers a manuscript in the first exposition in the semiconductor produced by stimulated emission of possibility that can be injected to the PN junction Are in the minority in mind to achieve stimulated emission; calculated according to the two brilliant transition zone between the radiation rate. Bading concluded Feng 'Newman on the basic theory of semiconductor laser after that. Through various means (for example, to inject a small number of PN junction carrier) disturbance belt electronic price band Hole and the balance of concentration, according to which non-minority-carrier in the compound and a photon. The rate of its radiation can be like amplifiers, with the same frequency of electromagnetic radiation. It should be said to be laser (Liser) the earliest concept of this than Gordon (Corden) and the Andean soup (Towes) reported by the quantum of microwave amplifiers (Maser) to the concept as early as 2001.
Ecsle Normale Superieure and Pierre Aigrain in 1956 had encouraged the U.S. radio company [RCA] Pankove start manufacturing the semiconductor laser. June 1958 in Brussels of an international conference on the statement, first published in the semiconductor be coherent light of the views, but it was not until 1964 he published articles on the theory of semiconductor lasers and experimental work. Soviet Lebedev Physical Institute Basov (Basov), and so on the outstanding contribution of semiconductor lasers, he is the first time in 1958 published an article in the semiconductor raised in the realization of negative-state (that is, population inversion) on the theory . In 1961 they published the first carrier will be injected into the semiconductor PN junction to achieve the "injection laser" exposition and demonstration in the tunnel diodes as high as in Jane and the PN junction to achieve population inversion (which is Produced by stimulated emission of the necessary conditions for) the possibility, but also that active high-density areas around the most active carrier of the border areas on both sides of the refractive index of a difference, creating optical waveguide effect. After these theories to the emergence of semiconductor laser has played a positive role in promoting, Basuo Fu therefore be Nobel Prize. However, in 1963, published by the Basuo Fu, and so on semiconductor laser experiment with the theory of the article is more active semiconductor materials for Ge. And La Vieques (Lax) in 1959 made direct bandgap semiconductor (such as GaAs, InP, etc.) than the indirect bandgap semiconductor (such as Ge, Si, etc.) is more suited to produce stimulated emission of material. This important thesis for the accuracy of which appear later confirmed by the semiconductor laser.
1960 Bell Labs of Wembley (Boyle) and Thomson put forward in parallel with the semiconductor and as a cleavage-feedback resonator, the strengthening of the laser is essential. Laser optical resonator is an integral part.
1961 Bernard (Bernard) and Dulafuge (DM raffo "rg)-use fee. Derived the concept of energy meters in the semiconductor active than in the medium to achieve population inversion conditions on the condition that the following year The success of semiconductor laser research has played an important guiding role of theory.
To sum up, in theory, that should be in the semiconductor laser direct bandgap semiconductor PN junction, with the injection-carrier method by Bernard Dulafuge a condition under the control of population inversion, from electronics and Hole compound generated by the laser radiation in the optical resonant cavity oscillation be enlarged and, finally have a coherent laser output.