1. The levy and ultra-high group area determined melting (FZ-Silicon)
Through the area of low melting process control impurity content low, defect density, lattice structure perfect determined, in the process of crystal growth not introducing any impurities, the resistivity usually in 1000 Ω. Cm above, mainly used for making high back pressure device and optical electronic devices.
The release of the 8 inches area determined melting, and my company independent research and development and into, is domestic first single 8 inches melting zone determined, the technology has reached the international advanced level.
2. Neutron irradiation melting zone determined (NTDFZ-Silicon)
The kind of neutron radiation determined through melting zone obtain high resistivity uniformity of the determined to ensure that the device the yield of production and consistency. Mainly used for making silicon rectifier, SCR, giant transistors, thyristor,
追问要准确点的翻译,不要翻译器的,如果哪位可以,帮下忙,我自己翻译了老半天翻译不好,谢谢啊!