帮忙查询sci检索号（wos号），有SCI数据库的朋友帮帮忙，谢谢！

Question

帮忙查询sci检索号（wos号），谢谢！
Title: Room-temperature thermoelectric properties of GaN thin films grown by metal organic chemical vapor deposition

Source: ACTA PHYSICA SINICA 64(4): Art. No. 047202 FEB 20 2015

Answer 1

Room-temperature thermoelectric properties of GaN thin films grown by metal organic chemicalvapor deposition

作者:Wang, BZ (Wang Bao-Zhu)[ 1,2,4 ] ; Zhang, XQ (Zhang Xiu-Qing)[ 1 ] ; Zhang, AD (Zhang Ao-Di)[ 1 ] ; Zhou, XR (Zhou Xiao-Ran)[ 1 ] ; Kucukgok, B(Kucukgok, Bahadir)[ 2 ] ; Na, L (Na Lu)[ 3 ] ; Xiao, HL (Xiao Hong-Ling)[ 4 ] ; Wang, XL (Wang Xiao-Liang)[ 4 ] ; Ferguson, IT (Ferguson, Ian T.)[ 2 ]

ACTA PHYSICA SINICA

卷: 64

 

期: 4

文献号: 047202

DOI: 10.7498/aps.64.047202

出版年: FEB 20 2015

查看期刊信息

摘要

The GaN thin films with different doping concentrations are grown by metal organic chemical vapor deposition. Carrier concentrations, mobilities and Seebeck coefficients of the GaN thin films are measured by Hall and Seebeck system at room temperature. The power factor and the thermoelectric figure of merit are calculated by experimental and theoretical data. The mobility and Seebeck coefficient of GaN thin film decrease with the increase of carrier concentration. The conductivity of GaN thin film increases with the increase of carrier concentration. The Seebeck coefficient of GaN thin film varies from 100 to 500 mu V/K, depending on carrier concentration. The highest power factor is 4.72 x 10(-4) W/mK(2) when the carrier concentration is 1.60 x 10(18) cm(-3). The thermal conductivity of GaN thin film decreases with the increase of carrier concentration due to the increase of phonon scattering. The largest thermoelectric figure of merit of the GaN thin film at room temperature is 0.0025 when the carrier concentration is 1.60 x 10(18) cm(-3).

关键词

作者关键词:GaN thin films; thermoelectric properties

作者信息

通讯作者地址: Wang, BZ (通讯作者)

Hebei Univ Sci & Technol, Schoole Informat Sci & Engn, Shijiazhuang 050018, Peoples R China.    

地址:

[ 1 ] Hebei Univ Sci & Technol, Schoole Informat Sci & Engn, Shijiazhuang 050018, Peoples R China    

[ 2 ] Univ N Carolina, Dept Elect & Comp Engn, Charlotte, NC 28223 USA    

[ 3 ] Univ N Carolina, Dept Engn Technol, Charlotte, NC 28223 USA    

[ 4 ] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China    

电子邮件地址:[email protected]

基金资助致谢

基金资助机构

授权号

National Natural Science Foundation of China     

61076052 

   

Natural Science Foundation of Hebei Province, China     

F2013208171 

   

查看基金资助信息   

出版商

CHINESE PHYSICAL SOC, P O BOX 603, BEIJING 100080, PEOPLES R CHINA

类别 / 分类

研究方向:Physics

Web of Science 类别:Physics, Multidisciplinary

文献信息

文献类型:Article

语种:Chinese

入藏号: WOS:000351281500046

ISSN: 1000-3290

期刊信息

Impact Factor (影响因子): Journal Citation Reports®

其他信息

IDS 号: CD7PA

Web of Science 核心合集中的 "引用的参考文献": 17

Web of Science 核心合集中的 "被引频次": 0